schottky barrier diode rb205t-90 ? applications ? dimensions (unit : mm) ? structure switching power supply ? features 1) cathode common type. (to-220) 2) low i r 3) high reliability ? construction silicon epitaxial planer ? absolute maximum ratings (ta=25c) symbol unit reverse voltage (repetitive peak) v rm v v r v average rectified forward current (*1) io a forward current surge peak (60hz / 1cyc) (*1) i fsm a tj ? c tstg ? c (*1)business frequencies, rating of r-load, 1/2 io per diode, tc=121 ? c ? electrical characteristic (ta=25c) symbol min. typ. max. unit forward voltage v f - - 0.78 v i f =7.5a reverse current i r - - 300 ? a v r =90v thermal impedance ? jc --2 ? c/w junction to case 15 100 junction temperature 150 parameter limits 90 reverse voltage (dc) 90 storage temperature ? 40 to ? 150 conditions parameter (1) (2) (3) 205 9 1/3 2011.04 - rev.e data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb205t-90 ? electrical characteristic curves 0 5 10 15 20 25 30 0 5 10 15 20 25 30 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 10 100 1000 110100 0 50 100 150 200 250 300 ave:157.0a 800 810 820 830 840 850 860 870 880 890 900 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 ave:12.4ns ta=25 i f =0.5a i r =1a irr=0.25*i r n=10pcs 720 730 740 750 760 770 0.01 0.1 1 10 100 1000 10000 100000 0 102030405060708090 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 900 10 100 1000 1 10 100 forward voltage v f (mv) v f -i f characteristics forward current:i f (a) reverse current:i r (ua) reverse voltage v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (ua) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( /w) trr dispersion map reverse recovery time:trr(ns) ta=-25 ta=125 ta=25 ta=75 ta=150 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz ave:735.7mv ta=25 i f =7.5a n=30pcs ta=25 v r =90v n=30pcs ave:25.4ua ta=25 f=1mhz v r =0v n=10pcs ave:850.3pf 8.3ms ifsm 1cyc 8.3ms ifsm 1cyc 8.3ms t ifsm 1ms im=100ma i f =7.5a 300us time forward power dissipation:pf(w) average rectified forward current : io(a) io-pf characteristics sin( =180) ta=150 ta=125 ta=75 ta=25 ta=-25 dc d=1/2 i fsm dispersion map 2/3 2011.04 - rev.e www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb205t-90 0 5 10 15 20 25 30 0 1 2 3 4 5 0 102030405060708090 dc d=1/2 sin( =180) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 reverse power dissipation:p r (w) reverse voltage:v r (v) v r -p r characteristics ambient temperature:ta( ) derating curve"(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ) derating curve"(io-tc) electrostatic discharge test esd(kv) esd dispersion map 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 sin( =180) dc d=1/2 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? ave:11.6kv ttj=150 d=t/t t v r io v r =45v 0a 0v t tj=150 d=t/t t v r io v r =45v 0a 0v sin( =180) dc d=1/2 3/3 2011.04 - rev.e www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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